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MBR4015LWT - ON Semiconductor

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MBR4015LWT Schottky Power Rectifier

MBR4015LWT SWITCHMODEt Schottky Power Rectifier TO247 Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity .

Features

epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. Features
• Highly Stable Oxide Passivated Junction
• Guardring for Overvoltage Protection
• Low Forward Voltage Drop
• Dual Diode Construction; Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating.
• Full Electrical Isolation without Additional Hardware
• Pb−Free Package is Available
* Mechanical Characteristics
• Case: Molded Epoxy
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Weight: 4..

The same part from a different manufacturer

Datasheet MBR4015LWT - Motorola MBR4015LWT

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MBR4015LWT/D Advance Information SWITCHMODE™ Power Recti.

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