MBR350 - ON Semiconductor

MBR350 Axial Lead Rectifiers

Axial Lead Rectifiers MBR350, MBR360 These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity pr.

Features

epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes. Features
 Extremely Low vF
 Low Power Loss/High Efficiency
 Highly Stable Oxide Passivated Junction
 Low Stored Charge, Majority Carrier Conduction
 Pb−Free Packages are Available
* Mechanical Characteristics:
 Case: Epoxy, Molded
 Weight: 1.1 Gram (Approximately)
 Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
 Lead Temperature for Solder.