MBR350 |
Part Number | MBR350 |
Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
Description | Axial Lead Rectifiers MBR350, MBR360 These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with o... |
Features |
epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes.
Features
Extremely Low vF Low Power Loss/High Efficiency Highly Stable Oxide Passivated Junction Low Stored Charge, Majority Carrier Conduction Pb−Free Packages are Available* Mechanical Characteristics: Case: Epoxy, Molded Weight: 1.1 Gram (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Solder... |
Document |
MBR350 Data Sheet
PDF 158.94KB |
Distributor | Stock | Price | Buy |
---|