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MBR30L45CT - Taiwan Semiconductor

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MBR30L45CT Dual Common Cathode Schottky Rectifier

G Green compound AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA=25℃ unless otherwise noted) AVERAGE FORWARD A CURRENT (A) FIG.1 FORWARD CURRENT DERATING CURVE 35 30 25 20 15 10 RESISTIVE OR INDUCTIVELOAD 5 WITH HEATSINK 0 0 25 50 75 100 125 150 CASE TEMPERATURE (oC) PEAK FORWARD SURGE CURRENT (A) FIG. 2 MAXIMUM FORWARD SURGE CURRENT PER LEG .

Features

- Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: TO-220AB Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - halogen-free Base P/N with prefix "H" on packing code - AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test, with prefix "H" on packing code meet JESD 201 class 2.

The same part from a different manufacturer

Datasheet MBR30L45CT - Formosa MS MBR30L45CT

High Barrier Low VF Trench MOS Power Schottky Rectifiers MBR30L45CT / MBR30L45FCT Formosa MS List List..

Datasheet MBR30L45CT - Frontier Electronics MBR30L45CT

MBR30L45CT/MBR30L45FCT SPECIFICATION Rev. A 30A LOW VF TRENCH MOS SCHOTTKY RECTIFIERS Fig 1. TO-220AB FOR MBR30L45CT .

Datasheet MBR30L45CT - INCHANGE MBR30L45CT

Schottky Barrier Rectifier INCHANGE Semiconductor MBR30L45CT FEATURES ·Metal silicon junction, majority carrier conduc.

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