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TRR® MBR30L100CTF Schottky barrier rectifiers Low IR at High Temperature Features ● Construction utilizes void-free molded plastic technique ● Low reverse leakage ● High forward surge current capability ● High temperature soldering guaranteed: 250°C/10 seconds ● Component in accordance RoHS 2011/65/EU Mechanical Date ● Case:TO-220AB/F Molding compound mee.
● Construction utilizes void-free molded plastic technique
● Low reverse leakage
● High forward surge current capability
● High temperature soldering guaranteed:
250°C/10 seconds
● Component in accordance RoHS 2011/65/EU
Mechanical Date
●
Case:TO-220AB/F Molding compound meets UL 94 V-0 flammability rating
● Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
● Polarity: As marked
● Mounting Position: Any
Major Ratings and Characteristics
IF(AV)
30A
VRRM
20 V to 200 V
IFSM
200A
VF
0.40V,0.45V,0.55V,0.65V,0.75V
Tjmax.
125°C,150°C
Maximum Ratings & Electrical Character.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MBR30L100CT |
Taiwan Semiconductor |
Dual Common Cathode Schottky Rectifier |
|
| 2 | MBR30L120CT |
Taiwan Semiconductor |
Dual Common Cathode Schottky Rectifier |
|
| 3 | MBR30L45CT |
Formosa MS |
Schottky Rectifier |
|
| 4 | MBR30L45CT |
Frontier Electronics |
SCHOTTKY RECTIFIER |
|
| 5 | MBR30L45CT |
INCHANGE |
Schottky Barrier Rectifier |
|
| 6 | MBR30L45CT |
Taiwan Semiconductor |
Dual Common Cathode Schottky Rectifier |
|
| 7 | MBR30L45CTG |
ON Semiconductor |
Switch-mode Power Rectifier |
|
| 8 | MBR30L45FCT |
Formosa MS |
Schottky Rectifier |
|
| 9 | MBR30L45FCT |
Frontier Electronics |
SCHOTTKY RECTIFIER |
|
| 10 | MBR30L60CT |
Taiwan Semiconductor |
Dual Common Cathode Schottky Rectifier |
|
| 11 | MBR30L60CT |
Formosa MS |
High Barrier Low VF Power Schottky Rectifiers |
|
| 12 | MBR30L60CT |
Frontier Electronics |
30A LOW VF TRENCH MOS SCHOTTKY RECTIFIERS |
|