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MBR20020CT - Naina Semiconductor

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MBR20020CT (MBR20020CT - MBR20040CTR) Schottky Power Diode

Naina Semiconductor Ltd. Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR20020CT thru MBR20040CTR Silicon Schottky Diode, 200A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Average .

Features





• Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR20020CT thru MBR20040CTR Silicon Schottky Diode, 200A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Average forward current Non-repetitive forward surge current, half sinewave Symbol VRRM VRMS VDC IF(AV) TC ≤ 135 oC TC = 25 oC tp = 8.3 ms Conditions MBR20020CT (R) 20 14 20 200 MBR20030CT MBR20035CT (R) (R) 30 21 30 200 35 25 35 200 MBR20040CT (R) 40 28 40 200 Units V V V A IFSM .

The same part from a different manufacturer

Datasheet MBR20020CT - Micro Commercial Components MBR20020CT

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Datasheet MBR20020CT - America Semiconductor MBR20020CT

Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/ .

Datasheet MBR20020CT - GeneSiC MBR20020CT

Silicon Power Schottky Diode Features • High Surge Capability • Types from 20 to 40 V VRRM • Not ESD Sensitive MBR20020.

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