MBR200100CTR - Naina Semiconductor

MBR200100CTR (MBR20045CT - MBR200100CTR) Schottky Power Diode

Naina Semiconductor Ltd. Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR20045CT thru MBR200100CTR Silicon Schottky Diode, 200A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Average.

Features

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• Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR20045CT thru MBR200100CTR Silicon Schottky Diode, 200A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Average forward current Non-repetitive forward surge current, half sinewave Symbol VRRM VRMS VDC IF(AV) TC ≤ 135 oC TC = 25 oC tp = 8.3 ms Conditions MBR20045CT (R) 45 32 45 200 MBR20060CT MBR20080CT (R) (R) 60 42 60 200 80 56 80 200 MBR200100C T(R) 100 70 100 200 Units V V V A I.