FUJITSU SEMICONDUCTOR DATA SHEET DS05-20841-4E FLASH MEMORY CMOS 8M (1M × 8/512K × 16) BIT MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90 s FEATURES www.DataSheet4U.com • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-s.
www.DataSheet4U.com
• Single 5.0 V read, write, and erase Minimizes system level power requirements
• Compatible with JEDEC-standard commands Uses same software commands as E2PROMs
• Compatible with JEDEC-standard world-wide pinouts 48-pin TSOP(I) (Package suffix: PFTN
– Normal Bend Type, PFTR
– Reversed Bend Type) 44-pin SOP (Package suffix: PF)
• Minimum 100,000 write/erase cycles
• High performance
55 ns maximum access time
• Sector erase architecture
One 16K byte, two 8K bytes, one 32K byte, and fifteen 64K bytes. Any combination of sectors can be concurrently erased. Also supports full .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MBM29F800BA-55 |
Fujitsu |
8M (1M x 8/512K x 16) BIT FLASH MEMORY | |
2 | MBM29F800BA-90 |
Fujitsu |
8M (1M x 8/512K x 16) BIT FLASH MEMORY | |
3 | MBM29F800BA |
Fujitsu Media Devices |
8M (1M x 8/512K x 16) BIT FLASH MEMORY | |
4 | MBM29F800TA |
Fujitsu Media Devices |
8M (1M X 8/512K X 16) BIT | |
5 | MBM29F800TA-55 |
Fujitsu |
8M (1M x 8/512K x 16) BIT FLASH MEMORY | |
6 | MBM29F800TA-70 |
Fujitsu |
8M (1M x 8/512K x 16) BIT FLASH MEMORY | |
7 | MBM29F800TA-90 |
Fujitsu |
8M (1M x 8/512K x 16) BIT FLASH MEMORY | |
8 | MBM29F002BC |
Fujitsu Media Devices |
2M (256K X 8) BIT | |
9 | MBM29F002BC-55 |
Fujitsu |
2M (256K x 8) BIT FLASH MEMORY | |
10 | MBM29F002BC-70 |
Fujitsu |
2M (256K x 8) BIT FLASH MEMORY | |
11 | MBM29F002BC-90 |
Fujitsu |
2M (256K x 8) BIT FLASH MEMORY | |
12 | MBM29F002TC |
Fujitsu Media Devices |
2M (256K x 8) BIT FLASH MEMORY |