MBM29DL800TA-12 - Fujitsu

MBM29DL800TA-12 8M (1M x 8/512K x 16) BIT FLASH MEMORY

FUJITSU SEMICONDUCTOR DATA SHEET DS05-20860-3E FLASH MEMORY CMOS 8M (1M × 8/512K × 16) BIT MBM29DL800TA-70/-90/-12/MBM29DL800BA-70/-90/-12 s FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Simultaneous operations Read-while-Erase or Read-while-Program • Compatible with JEDEC-standard commands Uses same software.

Features

• Single 3.0 V read, program, and erase Minimizes system level power requirements
• Simultaneous operations Read-while-Erase or Read-while-Program
• Compatible with JEDEC-standard commands Uses same software commands as E2PROMs
• Compatible with JEDEC-standard world-wide pinouts (Pin compatible with MBM29LV800TA/BA) 48-pin TSOP(I) (Package suffix: PFTN
  – Normal Bend Type, PFTR
  – Reversed Bend Type) 48-ball FBGA (Package suffix: PBT)
• Minimum 100,000 program/erase cycles
• High performance 70 ns maximum access time
• Sector erase architecture Two 16K byte, four 8K bytes, two 32K byte, and four.