FUJITSU SEMICONDUCTOR DATA SHEET DS05-20860-3E FLASH MEMORY CMOS 8M (1M × 8/512K × 16) BIT MBM29DL800TA-70/-90/-12/MBM29DL800BA-70/-90/-12 s FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Simultaneous operations Read-while-Erase or Read-while-Program • Compatible with JEDEC-standard commands Uses same software.
• Single 3.0 V read, program, and erase Minimizes system level power requirements
• Simultaneous operations Read-while-Erase or Read-while-Program
• Compatible with JEDEC-standard commands Uses same software commands as E2PROMs
• Compatible with JEDEC-standard world-wide pinouts (Pin compatible with MBM29LV800TA/BA) 48-pin TSOP(I) (Package suffix: PFTN
– Normal Bend Type, PFTR
– Reversed Bend Type) 48-ball FBGA (Package suffix: PBT)
• Minimum 100,000 program/erase cycles
• High performance
70 ns maximum access time
• Sector erase architecture
Two 16K byte, four 8K bytes, two 32K byte, and four.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MBM29DL800BA-12 |
Fujitsu |
8M (1M x 8/512K x 16) BIT FLASH MEMORY | |
2 | MBM29DL800BA-90 |
Fujitsu |
8M (1M x 8/512K x 16) BIT FLASH MEMORY | |
3 | MBM29DL800BA |
Fujitsu Media Devices |
8M (1M X 8/512K X 16) BIT | |
4 | MBM29DL800TA |
Fujitsu Media Devices |
8M (1M x 8/512K x 16) BIT FLASH MEMORY | |
5 | MBM29DL800TA-12 |
Fujitsu |
8M (1M x 8/512K x 16) BIT FLASH MEMORY | |
6 | MBM29DL800TA-70 |
Fujitsu |
8M (1M x 8/512K x 16) BIT FLASH MEMORY | |
7 | MBM29DL800TA-90 |
Fujitsu |
8M (1M x 8/512K x 16) BIT FLASH MEMORY | |
8 | MBM29DL161BD |
Fujitsu Media Devices |
(MBM29DL16xTD/BD) FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT | |
9 | MBM29DL161BD-70 |
Fujitsu |
FLASH MEMORY CMOS 16M (2M x 8/1M x 16) BIT | |
10 | MBM29DL161BD-90 |
Fujitsu |
FLASH MEMORY CMOS 16M (2M x 8/1M x 16) BIT | |
11 | MBM29DL161BE |
Fujitsu Media Devices |
(MBM29DL16xTE/BE) 16M (2MX8/1MX16) BIT Dual Operation | |
12 | MBM29DL161BE-12 |
Fujitsu |
16M (2M x 8/1M x 16) BIT Dual Operation |