MBM29DL164TD-70 - Fujitsu

MBM29DL164TD-70 FLASH MEMORY CMOS 16M (2M x 8/1M x 16) BIT

Host system can program or erase in one bank, then immediately and simultaneously read from the other bank Zero latency between read and write operations Read-while-erase Read-while-program • Single 3.0 V read, program, and erase Minimizes system level power requirements s PRODUCT LINE UP (Continued) Part No. Ordering Part No. VCC = 3.3 V +0.3.

Features

• 0.33 µm Process Technology
• Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to “MBM29DL16XTD/BD Device Bank Divisions Table” in sGENERAL DESCRIPTION) Host system can program or erase in one bank, then immediately and simultaneously read from the other bank Zero latency between read and write operations Read-while-erase Read-while-program
• Single 3.0 V read, program, and erase Minimizes system level power requirements s PRODUCT LINE UP (Continued) Part No. Ordering Part No. VCC = 3.3 V +0.3 V
  –0.3 V VCC = 3.0 V .