Host system can program or erase in one bank, then immediately and simultaneously read from the other bank Zero latency between read and write operations Read-while-erase Read-while-program • Single 3.0 V read, program, and erase Minimizes system level power requirements (Continued) s PRODUCT LINE UP Part No. Ordering Part No. VCC = 3.3 V VCC = 3.0 V +0.3 .
Dual Operation
• 0.33 µm Process Technology
• Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to “MBM29DL16XTD/BD Device Bank Divisions Table” in sGENERAL DESCRIPTION) Host system can program or erase in one bank, then immediately and simultaneously read from the other bank Zero latency between read and write operations Read-while-erase Read-while-program
• Single 3.0 V read, program, and erase Minimizes system level power requirements (Continued)
s PRODUCT LINE UP
Part No. Ordering Part No. VCC = 3.3 V VCC = 3.0 V
+0.3 V
–0.3 V +0..
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MBM29DL164BD-70 |
Fujitsu |
FLASH MEMORY CMOS 16M (2M x 8/1M x 16) BIT | |
2 | MBM29DL164BD-90 |
Fujitsu |
FLASH MEMORY CMOS 16M (2M x 8/1M x 16) BIT | |
3 | MBM29DL164BE |
Fujitsu Media Devices |
(MBM29DL16xTE/BE) 16M (2MX8/1MX16) BIT Dual Operation | |
4 | MBM29DL164BE-12 |
Fujitsu |
16M (2M x 8/1M x 16) BIT Dual Operation | |
5 | MBM29DL164BE-70 |
Fujitsu |
16M (2M x 8/1M x 16) BIT Dual Operation | |
6 | MBM29DL164BE-90 |
Fujitsu |
16M (2M x 8/1M x 16) BIT Dual Operation | |
7 | MBM29DL164TD |
Fujitsu Media Devices |
(MBM29DL16xTD/BD) FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT | |
8 | MBM29DL164TD-70 |
Fujitsu |
FLASH MEMORY CMOS 16M (2M x 8/1M x 16) BIT | |
9 | MBM29DL164TD-90 |
Fujitsu |
FLASH MEMORY CMOS 16M (2M x 8/1M x 16) BIT | |
10 | MBM29DL164TE |
Fujitsu Media Devices |
(MBM29DL16xTE/BE) 16M (2MX8/1MX16) BIT Dual Operation | |
11 | MBM29DL164TE-12 |
Fujitsu |
16M (2M x 8/1M x 16) BIT Dual Operation | |
12 | MBM29DL164TE-70 |
Fujitsu |
16M (2M x 8/1M x 16) BIT Dual Operation |