MAPLST2122-030CF - Tyco Electronics

MAPLST2122-030CF RF Power Field Effect Transistor

www.DataSheet4U.com RF Power Field Effect Transistor LDMOS, 2110 — 2170 MHz, 30W, 28V 4/6/2005 Preliminary MAPLST2122-030CF Features Designed for W-CDMA base station applications in the 2.1 to 2.2 GHz Frequency Band. Suitable for TDMA, CDMA, and multicarrier power amplifier applications. Q Q Q Package Style 30W Output Power at P1dB (CW) 12dB Minimum G.

Features

Designed for W-CDMA base station applications in the 2.1 to 2.2 GHz Frequency Band. Suitable for TDMA, CDMA, and multicarrier power amplifier applications. Q Q Q Package Style 30W Output Power at P1dB (CW) 12dB Minimum Gain at P1dB (CW) W-CDMA Typical Performance: (28VDC, -45dBc ACPR @ 4.096MHz) Q Output Power: 4.5W (typ.) Q Gain: 12dB (typ.) Q Efficiency: 16% (typ.) 10:1 VSWR Ruggedness (CW @ 30W, 28V, 2110MHz) Q MAPLST2122-030CF Maximum Ratings Parameter Drain—Source Voltage Gate—Source Voltage Total Power Dissipation @ TC = 25 °C Storage Temperature Junction Temperature Symbol VDSS VGS.