MAPLST1820-030CF - Tyco Electronics

MAPLST1820-030CF RF Power Field Effect Transistor

www.DataSheet4U.com RF Power Field Effect Transistor LDMOS, 1800 — 2000 MHz, 30W, 26V 5/14/04 Preliminary MAPLST1820-030CF Features Designed for base station applications in the 1805-1880MHz or 1930-1990MHz Frequency Band. Suitable for GSM, EDGE, TDMA, CDMA, and multi-carrier amplifier applications Q Q Q Q Q Package Style 30W CW Output Power at P1dB 1.

Features

Designed for base station applications in the 1805-1880MHz or 1930-1990MHz Frequency Band. Suitable for GSM, EDGE, TDMA, CDMA, and multi-carrier amplifier applications Q Q Q Q Q Package Style 30W CW Output Power at P1dB 13dB Gain at P1dB 45% Drain Efficiency at P1dB 10:1 VSWR Ruggedness (CW @ 30W, 26V, 1900MHz) Internal input and output matching P-237 Maximum Ratings Parameter Drain—Source Voltage Gate—Source Voltage Drain Current — Continuous Total Power Dissipation @ TC = 25 °C Storage Temperature Junction Temperature Symbol VDSS VGS ID PD TSTG TJ Rating 65 20 10 97 -40 to +150 +200 Unit.