Fast Recovery Diodes (FRD) MA3D654 (MA6D54) Silicon planar type (cathode common) For high-frequency rectification 9.9±0.3 Unit: mm 4.6±0.2 2.9±0.2 3.0±0.5 ■ Features φ 3.2±0.1 15.0±0.5 • Low forward voltage VF • Fast reverse recovery time trr • TO-220D (Full-pack package) with high dielectric breakdown voltage • Easy-to-mount, caused by its V cut.
φ 3.2±0.1
15.0±0.5
• Low forward voltage VF
• Fast reverse recovery time trr
• TO-220D (Full-pack package) with high dielectric breakdown voltage
• Easy-to-mount, caused by its V cut lead end
1.4±0.2 1.6±0.2
2.6±0.1
/
■ Absolute Maximum Ratings Ta = 25°C
13.7±0.2 4.2±0.2
Solder Dip
0.8±0.1
0.55±0.15
e Parameter
Symbol Rating
Unit
c type) Repetitive peak reverse voltage VRRM
300
V
n d ge. ed Non-repetitive peak reverse
VRSM
300
V
sta tinu surge voltage
a e cycle iscon Forward current (Average)
IF(AV)
10
A
life d, d Non-repetitive peak forward
IFSM
60
A
n u duct ty.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MA6D50 |
Panasonic |
Fast Recovery Diode | |
2 | MA6D52 |
Panasonic |
Fast Recovery Diode | |
3 | MA6D53 |
Panasonic |
Fast Recovery Diode | |
4 | MA6D49 |
Panasonic |
Fast Recovery Diode | |
5 | MA6D90 |
Panasonic |
Fast Recovery Diode | |
6 | MA60000 |
MegaChips |
Sensor Fusion Engine | |
7 | MA6116 |
GEC PLESSEY |
RADIATION HARD 2048 x 8 BIT STATIC RAM | |
8 | MA6116A |
Moai |
USB2.0 to SATA Bridge Controller | |
9 | MA6160FN |
Toshiba |
Low Consumption Current Stereo Headphone Amplifier | |
10 | MA6216 |
GEC PLESSEY |
RADIATION HARD 2048 x 8 BIT STATIC RAM | |
11 | MA6221-S7K |
Mosart |
RF Optical Mouse Controller | |
12 | MA629 |
Matsushita Electric |
(MA6xx) Fast Recovery Diodes |