MA6216 - GEC PLESSEY

MA6216 RADIATION HARD 2048 x 8 BIT STATIC RAM

MA6116 & MA6216 MARCH 1995 DS3582-3.1 MA6116 & MA6216 RADIATION HARD 2048 x 8 BIT STATIC RAM The MA6116 16k Static RAM is configured as 2048 x 8 bits and manufactured using CMOS-SOS high performance, radiation hard, 3µm technology. The MA6216 is manufactured using 2.5µm technology resulting in faster performance. The design uses a 6 transistor cell and has .

Features

s 3µm CMOS-SOS Technology s Latch-up Free s Fast Access Time 110ns (MA6116) and 85ns (MA6216) Typical s Total Dose 106 Rad(Si) s Transient Upset >1010 Rad(Si)/sec s SEU <10-10 Errors/bitday s Single 5V Supply s Three State Output s Low Standby Current 100µA Typical s -55°C to +125°C Operation s TTL and CMOS Compatible Inputs s Fully Static Operation Figure 1: Truth Table Figure 2: Block Diagram 1 http://www.Datasheet4U.com MA6116 & MA6216 CHARACTERISTICS AND RATINGS Symbol VDD VI TA TS Parameter Supply Voltage Input Voltage Operating Temperature Storage Temperature Min. -0.5 -0.3 -55 -65 .