Fast Recovery Diodes (FRD) MA111 MA653 Silicon planer type (cathode common) 0.7±0.1 For switching s Features q q Unit : mm 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 Low forward voltage V F Fast reverse recovery time trr 16.7±0.3 q High reverse voltage VR 7.5±0.2 ø3.1±0.1 4.2±0.2 1.4±0.1 1.3±0.2 0.8±0.1 0.5 -0.1 +0.2 14.0±0.5 Solder Dip 4.0 2.54±0.25 s.
q q
Unit : mm
10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2
Low forward voltage V F Fast reverse recovery time trr
16.7±0.3
q
High reverse voltage VR
7.5±0.2
ø3.1±0.1
4.2±0.2
1.4±0.1 1.3±0.2 0.8±0.1 0.5 -0.1
+0.2
14.0±0.5
Solder Dip
4.0
2.54±0.25
s Absolute Maximum Ratings (Ta= 25˚C)
Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current Junction temperature Storage temperature
* Sine half wave : 10ms/cycle
5.08±0.5
Symbol VRRM VRSM IF(AV) IFSM
* Tj Tstg
Rating 300 300 5 45
– 40 to +150
– 40 to +150
Uni.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MA650 |
Panasonic |
Silicon planer type (cathode common) | |
2 | MA651 |
Panasonic |
Fast Recovery Diodes | |
3 | MA652 |
Panasonic |
Fast Recovery Diodes | |
4 | MA654 |
Panasonic |
Fast Recovery Diodes | |
5 | MA655 |
Panasonic |
Fast Recovery Diodes | |
6 | MA6581 |
Panasonic |
(MA65xx) A/D D/A Converter | |
7 | MA6590 |
Panasonic |
A/D D/A Converter | |
8 | MA6593 |
Panasonic |
(MA65xx) A/D D/A Converter | |
9 | MA60000 |
MegaChips |
Sensor Fusion Engine | |
10 | MA6116 |
GEC PLESSEY |
RADIATION HARD 2048 x 8 BIT STATIC RAM | |
11 | MA6116A |
Moai |
USB2.0 to SATA Bridge Controller | |
12 | MA6160FN |
Toshiba |
Low Consumption Current Stereo Headphone Amplifier |