M36W416BG - ST Microelectronics

M36W416BG 16 Mbit 1Mb x16 / Boot Block Flash Memory and 4Mbit 256Kb x16 SRAM / Multiple Memory Product

. . . . . 6 Figure 2. Logic Diagram . . . . 6 Table 1. Signal Names . . .

Features

SUMMARY s MULTIPLE MEMORY PRODUCT
  – 16 Mbit (1Mb x 16) Boot Block Flash Memory
  – 4 Mbit (256Kb x 16) SRAM s SUPPLY VOLTAGE
  – VDDF = VDDS = 2.7V to 3.3V
  – VDDQF = VDDS = 2.7V to 3.3V
  – VPPF = 12V for Fast Program (optional) s s s SRAM s 4 Mbit (256Kb x 16) s s s ACCESS TIME: 70ns LOW VDDS DATA RETENTION: 1.5V POWER DOWN FEATURES USING TWO CHIP ENABLE INPUTS ACCESS TIME: 70ns, 85ns LOW POWER CONSUMPTION ELECTRONIC SIGNATURE
  – Manufacturer Code: 20h
  – Top Device Code, M36W416TG: 88CEh
  – Bottom Device Code, M36W416BG: 88CFh Figure 1. Packages FBGA FLASH MEMORY s MEMORY BLOCKS
  – Parameter Blo.