M36W0R6030B0 - STMicroelectronics

M36W0R6030B0 64-Mbit Flash Memory and 8-Mbit SRAM

. . . . . 4 Figure 2. Logic Diagram . . . . 4 Table 1. Signal Names . . .

Features

SUMMARY MULTI-CHIP PACKAGE
  – 1 die of 64 Mbit (4Mb x 16) Flash Memory
  – 1 die of 8 Mbit SRAM
■ SUPPLY VOLTAGE
  – VDDF = VDDQ = VDDS = 1.7 to 1.95V
■ LOW POWER CONSUMPTION
■ ELECTRONIC SIGNATURE
  – Manufacturer Code: 20h
  – Device Code (Top Flash Configuration): 8810h
  – Device Code (Bottom Flash Configuration): 8811h
■ PACKAGE
  – Compliant with Lead-Free Soldering Processes
  – Lead-Free Versions FLASH MEMORY
■ PROGRAMMING TIME
  – 8µs by Word typical for Fast Factory Program
  – Double/Quadruple Word Program option
  – Enhanced Factory Program options
■ MEMORY BLOCKS
  – Multiple Bank Memory Array: 4 Mbit B.