M36L0T8060B1 - ST Microelectronics

M36L0T8060B1 (M36L0T8060B1 / M36L0T8060T1) 256 Mbit Flash memory and 64 Mbit PSRAM

. . . . 6 Signal descriptions . . . . . . 9 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 2.10 2.11 2.12 2.13 2.14 2.15 2.16 2.17 2.18 2.19 2.20 2.21 Address inputs (A0-A23) . . . . . . . . .

Features

Multichip package
■ 1 die of 256 Mbit (16 Mb ×16, multiple bank, multilevel, burst) Flash memory 1 die of 64 Mbit (4 Mb ×16) Pseudo SRAM Supply voltage
  – VDDF = 1.7 V to 1.95 V
  – VDDQF = VCCP = 2.7 V to 3.1 V
  – VPPF = 9 V for fast program Electronic signature
  – Manufacturer code: 20h
  – Top device code M36L0T8060T1: 880Dh
  – Bottom device code M36L0T8060B1: 880Eh Package
  – ECOPACK® FBGA
■
■ TFBGA88 (ZAQ) 8 x 10 mm
■
■ Security
  – 64 bit unique device number
  – 2112 bit user programmable OTP cells Block locking
  – All blocks locked at power-up
  – Any combination of blocks can be locked with ze.