. . . . . 4 Figure 2. Logic Diagram . . . . 4 Table 1. Signal Names . . .
SUMMARY
MULTI-CHIP PACKAGE
– 1 die of 128Mbit (8Mx16, Multiple Bank, Multi-level, Burst) Flash Memory
– 1 die of 32Mbit (2Mx16) Pseudo SRAM
■ SUPPLY VOLTAGE
– VDDF = 1.7 to 2V
– VDDP = VDDQ = 2.7 to 3.3V
– VPP = 9V for fast program (12V tolerant)
■ ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code (Top Flash Configuration) M36L0T7050T0: 88C4h
– Device Code (Bottom Flash Configuration) M36L0T7050B0: 88C5h
■ PACKAGE
– Compliant with Lead-Free Soldering Processes
– Lead-Free Versions FLASH MEMORY
■ SYNCHRONOUS / ASYNCHRONOUS READ
– Synchronous Burst Read mode: 50MHz
– Asynchronous Page .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | M36L0T7050B0 |
STMicroelectronics |
(M36L0T7050T0 / M36L0T7050B0) 128Mbit Flash Memory 32Mbit PSRAM | |
2 | M36L0T7050B2 |
Numonyx |
(M36L0T7050T2 / M36L0T7050B2) 128 Mbit Flash memory and 32 Mbit PSRAM | |
3 | M36L0T7050T0 |
STMicroelectronics |
(M36L0T7050T0 / M36L0T7050B0) 128Mbit Flash Memory 32Mbit PSRAM | |
4 | M36L0T7050T2 |
Numonyx |
(M36L0T7050T2 / M36L0T7050B2) 128 Mbit Flash memory and 32 Mbit PSRAM | |
5 | M36L0T8060B1 |
ST Microelectronics |
(M36L0T8060B1 / M36L0T8060T1) 256 Mbit Flash memory and 64 Mbit PSRAM | |
6 | M36L0T8060T1 |
ST Microelectronics |
(M36L0T8060B1 / M36L0T8060T1) 256 Mbit Flash memory and 64 Mbit PSRAM | |
7 | M36L0R7040B0 |
STMicroelectronics |
128-Mbit Flash Memory and 16-Mbit PSRAM | |
8 | M36L0R7040T0 |
STMicroelectronics |
128-Mbit Flash Memory and 16-Mbit PSRAM | |
9 | M36L0R7050 |
ST Microelectronics |
128 Mbit (Multiple Bank / Multi-Level / Burst) Flash Memory 32 Mbit (2M x16) PSRAM | |
10 | M36L0R7050B0 |
STMicroelectronics |
128 Mbit Flash Memory 32 Mbit PSRAM | |
11 | M36L0R7050L1 |
ST Microelectronics |
(M36L0R70x0x1) Flash memory | |
12 | M36L0R7050T0 |
STMicroelectronics |
128 Mbit Flash Memory 32 Mbit PSRAM |