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The Samsung M366S0823ETS is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M366S0823ETS consists of eight CMOS 8M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy substrate. One 0.1uF and one 0.33 uF decoupling capacitors are mounted on the printed c.
ions.
FEATURE
• Performance range Part No. Max Freq. (Speed) M366S0823ETS-C7A 133MHz (7.5ns @ CL=3) M366S0823ETS-C75 133MHz (7.5ns @ CL=3) M366S0823ETS-C1H 100MHz (10ns @ CL=2) M366S0823ETS-C1L 100MHz (10ns @ CL=3) Burst mode operation Auto & self refresh capability (4096 Cycles/64ms) LVTTL compatible inputs and outputs Single 3.3V ± 0.3V power supply MRS cycle with address key programs Latency (Access from column address) Burst length (1, 2, 4, 8 & Full page) Data scramble (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock Serial presence detect w.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | M366S0823CT0 |
Samsung Semiconductor |
SDRAM DIMM |
|
| 2 | M366S0823CTF |
Samsung Semiconductor |
SDRAM DIMM |
|
| 3 | M366S0823CTL |
Samsung Semiconductor |
SDRAM DIMM |
|
| 4 | M366S0823CTS |
Samsung Semiconductor |
SDRAM DIMM |
|
| 5 | M366S0823DTF |
Samsung Semiconductor |
SDRAM DIMM |
|
| 6 | M366S0823DTS |
Samsung Semiconductor |
SDRAM DIMM |
|
| 7 | M366S0823FTS |
Samsung Semiconductor |
SDRAM DIMM |
|
| 8 | M366S0824CT0 |
Samsung Semiconductor |
SDRAM DIMM |
|
| 9 | M366S0824CTL |
Samsung Semiconductor |
SDRAM DIMM |
|
| 10 | M366S0824DT0 |
Samsung Semiconductor |
SDRAM DIMM |
|
| 11 | M366S0824ET0 |
Samsung Semiconductor |
SDRAM DIMM |
|
| 12 | M366S0924ETS-C7A |
Samsung semiconductor |
(M3xxSxxxxETx-C7A) SDRAM Unbuffered Module |
|