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M29W128GH - Numonyx

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M29W128GH 128 Mbit 3V Supply Flash Memory

. . . . 8 Signal descriptions . . . . . 13 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 2.10 2.11 2.12 2.13 2.14 Address inputs (A0-A22) . . . . . . . . .

Features

„ Supply voltage
  – VCC = 2.7 to 3.6 V for program, erase, read
  – VCCQ = 1.65 to 3.6 V for I/O buffers
  – VPPH = 12 V for fast program (optional) „ Asynchronous random/page read
  – Page size: 8 words or 16 bytes
  – Page access: 25, 30 ns
  – Random access: 60 (only available upon customer request) or 70, 80 ns „ Fast program commands
  – 32 words (64-byte write buffer) „ Enhanced buffered program commands
  – 256 words „ Programming time
  – 16 μs per byte/word typical
  – Chip program time: 5 s with VPPH and 8 s without VPPH „ Memory organization
  – M29128GH/L: 128 main blocks, 128 Kbytes/64 Kwords each „ P.

The same part from a different manufacturer

Datasheet M29W128GH - Micron M29W128GH

128Mb 3V Embedded Parallel NOR Flash Features Parallel NOR Flash Embedded Memory M29W128GH, M29W128GL Features • Supply.

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