. . . . 8 Signal descriptions . . . . . 13 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 2.10 2.11 2.12 2.13 2.14 Address inputs (A0-A22) . . . . . . . . .
Supply voltage
– VCC = 2.7 to 3.6 V for program, erase, read
– VCCQ = 1.65 to 3.6 V for I/O buffers
– VPPH = 12 V for fast program (optional) Asynchronous random/page read
– Page size: 8 words or 16 bytes
– Page access: 25, 30 ns
– Random access: 60 (only available upon customer request) or 70, 80 ns Fast program commands
– 32 words (64-byte write buffer) Enhanced buffered program commands
– 256 words Programming time
– 16 μs per byte/word typical
– Chip program time: 5 s with VPPH and 8 s without VPPH Memory organization
– M29128GH/L: 128 main blocks, 128 Kbytes/64 Kwords each P.
128Mb 3V Embedded Parallel NOR Flash Features Parallel NOR Flash Embedded Memory M29W128GH, M29W128GL Features • Supply.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | M29W128GL |
Micron |
Parallel NOR Flash Embedded Memory | |
2 | M29W128GL |
Numonyx |
128 Mbit 3V Supply Flash Memory | |
3 | M29W128FH |
Numonyx |
128 Mbit 3V Supply Flash Memory | |
4 | M29W128FL |
Numonyx |
128 Mbit 3V Supply Flash Memory | |
5 | M29W102BB |
ST Microelectronics |
1 Mbit 64Kb x16 / Boot Block Low Voltage Single Supply Flash Memory | |
6 | M29W102BT |
ST Microelectronics |
1 Mbit 64Kb x16 / Boot Block Low Voltage Single Supply Flash Memory | |
7 | M29W116BB |
STMicroelectronics |
16 Mbit Low Voltage Single Supply Flash Memory | |
8 | M29W116BT |
STMicroelectronics |
16 Mbit Low Voltage Single Supply Flash Memory | |
9 | M29W160BB |
ST Microelectronics |
16 Mbit 2Mb x8 or 1Mb x16 / Boot Block Low Voltage Single Supply Flash Memory | |
10 | M29W160BT |
ST Microelectronics |
16 Mbit 2Mb x8 or 1Mb x16 / Boot Block Low Voltage Single Supply Flash Memory | |
11 | M29W160DB |
ST Microelectronics |
16 Mbit 2Mb x8 or 1Mb x16 / Boot Block 3V Supply Flash Memory | |
12 | M29W160DT |
ST Microelectronics |
16 Mbit 2Mb x8 or 1Mb x16 / Boot Block 3V Supply Flash Memory |