The M28F410 and M28F420 FLASH MEMORIES are non-volatile memories that may be erased electrically at the block level and programmed by byte or word. The interface is directly compatible with most microprocessors. SO44 and TSOP56 packages are used. Organization The organization, as 512K x 8 or 256K x 16, is selectable by an external BYTE signal. When BYTE is .
Data Input/Output or Address Input Chip Enable Output Enable Write Enable Byte/Word Organization Reset/Power Down/Boot Block Unlock Program & Erase Supply Voltage Supply Voltage W E G VSS AI01130C 1/38 This is preliminary infor mationon a new product now in developmen t or undergoing evaluation. Details are subject to change without notice. M28F410, M28F420 Figure 2A. TSOP Pin Connections NC NC A15 A14 A13 A12 A11 A10 A9 A8 NC NC W RP NC NC VPP DU NC A17 A7 A6 A5 A4 A3 A2 A1 NC 1 56 NC A16 BYTE VSS DQ15A-1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 G VSS E .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | M28F410 |
ST Microelectronics |
4-Megabit Flash Memory | |
2 | M28F008 |
Intel Corporation |
8 MBIT (1 MBIT x 8) FLASH MEMORY | |
3 | M28F010 |
Intel Corporation |
1024K (128K x 8) CMOS FLASH MEMORY | |
4 | M28F101 |
STMicroelectronics |
1 Mb FLASH MEMORY | |
5 | M28F102 |
STMicroelectronics |
1 Mbit Flash Memory | |
6 | M28F201 |
STMicroelectronics |
2 Mb FLASH MEMORY | |
7 | M28F210 |
ST Microelectronics |
(M28F210 / M28F220) 2M Flash Memory | |
8 | M28F211 |
ST Microelectronics |
(M28F211 / M28F221) 2M Flash Memory | |
9 | M28F220 |
ST Microelectronics |
(M28F210 / M28F220) 2M Flash Memory | |
10 | M28F221 |
ST Microelectronics |
(M28F211 / M28F221) 2M Flash Memory | |
11 | M28F256 |
STMicroelectronics |
256 Kbit Flash Memory | |
12 | M28F512 |
STMicroelectronics |
512 Kbit (64Kb x8 Bulk Erase) Flasxh Memory |