Symbol A0 –A16 DQ0 –DQ7 Type INPUT INPUT OUTPUT Name and Function ADDRESS INPUTS for memory addresses Addresses are internally latched during a write cycle DATA INPUT OUTPUT Inputs data during memory write cycles outputs data during memory read cycles The data pins are active high and float to tri-state OFF when the chip is deselected or the outputs are disa.
g 10% VCC Tolerance Maximum Latch-Up Immunity through EPI Processing Y Y Y Y ETOX-III Flash-Memory Technology EPROM-Compatible Process Base High-Volume Manufacturing Experience Compatible with JEDEC-Standard Byte-Wide EPROM Pinouts 10 000 Program Erase Cycles Minimum Available in Three Product Grades QML b 55 C to a 125 C (TC) SE2 b 40 C to a 125 C (TC) SE3 b 40 C to a 110 C (TC) Y Intel’s M28F010 is a 1024-Kbit byte-wide in-system re-writable CMOS nonvolatile flash memory It is organized as 131 072 bytes of 8 bits and is available in a 32-pin hermetic CERDIP package The M28F010 is also .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | M28F008 |
Intel Corporation |
8 MBIT (1 MBIT x 8) FLASH MEMORY | |
2 | M28F101 |
STMicroelectronics |
1 Mb FLASH MEMORY | |
3 | M28F102 |
STMicroelectronics |
1 Mbit Flash Memory | |
4 | M28F201 |
STMicroelectronics |
2 Mb FLASH MEMORY | |
5 | M28F210 |
ST Microelectronics |
(M28F210 / M28F220) 2M Flash Memory | |
6 | M28F211 |
ST Microelectronics |
(M28F211 / M28F221) 2M Flash Memory | |
7 | M28F220 |
ST Microelectronics |
(M28F210 / M28F220) 2M Flash Memory | |
8 | M28F221 |
ST Microelectronics |
(M28F211 / M28F221) 2M Flash Memory | |
9 | M28F256 |
STMicroelectronics |
256 Kbit Flash Memory | |
10 | M28F410 |
ST Microelectronics |
4-Megabit Flash Memory | |
11 | M28F420 |
ST Microelectronics |
4-Megabit Flash Memory | |
12 | M28F512 |
STMicroelectronics |
512 Kbit (64Kb x8 Bulk Erase) Flasxh Memory |