The M25P05 is a 512 Kbit (64K x 8) Serial Flash Memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 128 bytes at a time, using the Page Program instruction. The memory is organized as 2 sectors, each containing 256 pages. Each page is 128 bytes wide. Thus, the whole memory can be v.
SUMMARY This device is now designated as “Not for New Design”. Please use the M25P05-A in all future designs (as described in application note AN1511). s 512 Kbit of Flash Memory s Figure 1. Packages Page Program (up to 128 Bytes) in 3 ms (typical) Sector Erase (256 Kbit) in 1 s (typical) Bulk Erase (512 Kbit) in 2 s (typical) 2.7 V to 3.6 V Single Supply Voltage SPI Bus Compatible Serial Interface 20 MHz Clock Rate (maximum) Deep Power-down Mode 1 µA (typical) Electronic Signature More than 100,000 Erase/Program Cycles per Sector More than 20 Year Data Retention s s s s s s s s 8 1 SO8 (M.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | M25P05-A |
STMicroelectronics |
512 Kbit/ Low Voltage/ Serial Flash Memory | |
2 | M25P05-A |
Numonyx |
512 Kbits of flash memory | |
3 | M25P10 |
STMicroelectronics |
1 Mbit Low Voltage Paged Flash Memory With 20 MHz Serial SPI Bus Interface | |
4 | M25P10-A |
STMicroelectronics |
1 Mbit/ Low Voltage/ Serial Flash Memory With 25 MHz SPI Bus Interface | |
5 | M25P10A |
Micron |
1Mb 3V Serial Flash Embedded Memory | |
6 | M25P128 |
ST Microelectronics |
128 Mbit (Multilevel) Low Voltage Serial Flash Memory | |
7 | M25P128 |
Numonyx |
serial flash memory | |
8 | M25P16 |
STMicroelectronics |
16-Mbit Low Voltage Serial Flash Memory | |
9 | M25P16 |
Numonyx |
Flash Memory | |
10 | M25P16 |
Micron |
Flash Embedded Memory | |
11 | M25P16-V6D11 |
Micron |
Flash Embedded Memory | |
12 | M25P16-VMC6G |
Micron |
Flash Embedded Memory |