. . . . 6 2 Signal descriptions . . . . . . .
■ 512 Kbits of flash memory
■ Page program (up to 256 bytes) in 1.4 ms
(typical)
■ Sector erase (256 Kbits) in 0.65 s (typical)
■ Bulk erase (512 Kbits) in 0.85 s (typical)
■ 2.3 to 3.6 V single supply voltage
■ SPI bus compatible serial interface
■ 50 MHz clock rate (maximum)
■ Deep power-down mode 1 µA (typical)
■ Electronic signatures
– JEDEC standard two-byte signature (2010h)
– RES instruction, one-byte, signature (05h), for backward compatibility
■ More than 100,000 erase/program cycles per sector
■ More than 20 years data retention
■ ECOPACK® packages available
SO8 (MN) 150 mil width
V.
The M25P05-A is a 512 Kbit (64K x 8) Serial Flash Memory, with advanced write protection mechanisms, accessed by a high .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | M25P05 |
STMicroelectronics |
512 Kbit/ Low Voltage/ Serial Flash Memory | |
2 | M25P10 |
STMicroelectronics |
1 Mbit Low Voltage Paged Flash Memory With 20 MHz Serial SPI Bus Interface | |
3 | M25P10-A |
STMicroelectronics |
1 Mbit/ Low Voltage/ Serial Flash Memory With 25 MHz SPI Bus Interface | |
4 | M25P10A |
Micron |
1Mb 3V Serial Flash Embedded Memory | |
5 | M25P128 |
ST Microelectronics |
128 Mbit (Multilevel) Low Voltage Serial Flash Memory | |
6 | M25P128 |
Numonyx |
serial flash memory | |
7 | M25P16 |
STMicroelectronics |
16-Mbit Low Voltage Serial Flash Memory | |
8 | M25P16 |
Numonyx |
Flash Memory | |
9 | M25P16 |
Micron |
Flash Embedded Memory | |
10 | M25P16-V6D11 |
Micron |
Flash Embedded Memory | |
11 | M25P16-VMC6G |
Micron |
Flash Embedded Memory | |
12 | M25P16-VMC6TG |
Micron |
Flash Embedded Memory |