LX803 - Polyfet RF Devices

LX803 SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

LX803 Silicon VDMOS and LDMOS transistors designed specifically SILICON GATE ENHANCEMENT MODE for broadband RF applications. RF POWER LDMOS TRANSISTOR Suitable for Military Radios, Cellular and Paging Amplifier Base 45 Watts Single Ended Stations, Broadcast FM/AM, MRI, Laser Driver and others. Package Style LX2 TM "Polyfet" process features low feedback an.

Features

low feedback and output capacitances HIGH EFFICIENCY, LINEAR, resulting in high Ft transistors with HIGH GAIN, LOW NOISE high input impedance and high efficiency. o ABSOLUTE MAXIMUM RATINGS (TC = 25 C) Total Device Dissipation 120 Watts Junction to Case Thermal Resistance 1.25 o C/W Maximum Junction Temperature 200 o C Storage Temperature DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 20 V -65 o C to 150o C 6 A RF CHARACTERISTICS ( SYMBOL Gps PARAMETER Common Source Power Gain Drain Efficiency Load Mismatch Tolerance MIN 11 55 TYP 45WATTS OU.