This test is conducted for the purpose of detemining the resisance of a part in electrical and themal stressed. Reference Standard MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 Operating Life Test High Temperature Storage Test 1.Ta=105 ¢J¡Ó 5 ¢J 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under o.
5 -40 ~ +100 Max 260 ¢J for 5 sec Max mA mA mW £g A ¢J ¢J Typical Electrical & Optical Characteristics (Ta=25 ¢J ) PART NO MATERIAL Emitted COLOR Peak wave length £f Pnm Spectral halfwidth ¡µ£f nm Forward voltage @20mA(V) Luminous intensity @10mA(mcd) Viewing angle 2£c 1/2 (deg) Lens Red Diffused 610 45 Min. 1.7 Max. 2.6 Min. 4.5 Typ. 7.5 50 LSI11240 GaAsP/GaP Orange Note : 1.The forward voltage data did not including ¡Ó 0.1V testing tolerance. 2. The luminous intensity data did not including ¡Ó 15% testing tolerance. LIGITEK ELECTRONICS CO.,LTD. www.DataSheet4U.com Proper.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | LSI1012LT1G |
LRC |
N-Channel 1.8-V (G-S) MOSFET | |
2 | LSI1012N3T5G |
LRC |
N-Channel 1.8-V (G-S) MOSFET | |
3 | LSI1012XT1G |
LRC |
N-Channel 1.8-V (G-S) MOSFET | |
4 | LSI1013LT1G |
LRC |
P-Channel 1.8-V (G-S) MOSFET | |
5 | LSI1013XT1G |
LRC |
P-Channel 1.8-V (G-S) MOSFET | |
6 | LSI1032E |
Lattice Semiconductor |
ISPLSI1032E | |
7 | LSI320HN01-0 |
Samsung |
TFT LCD | |
8 | LSI53C810A |
LSI Logic Corporation |
Pci to Scsi I/o Processor | |
9 | LSI53C825A |
LSI Logic Corporation |
Pci to Ultra Scsi I/o Processor Technical Manual | |
10 | LSI53C875 |
LSI Logic |
PCI to Ultra SCSI I/O Processor | |
11 | LSI53C875A |
LSI Logic |
PCI to Ultra SCSI Controller | |
12 | LSI53C875E |
LSI Logic |
PCI to Ultra SCSI I/O Processor |