N-Channel 1.8-V (G-S) MOSFET FEATURES D TrenchFETr Power MOSFET: 1.8-V Rated D Gate-Source ESD Protected: 2000 V D High-Side Switching D Low On-Resistance: 0.7 W D Low Threshold: 0.8 V (typ) D Fast Switching Speed: 10 ns D S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capab.
D TrenchFETr Power MOSFET: 1.8-V Rated D Gate-Source ESD Protected: 2000 V D High-Side Switching D Low On-Resistance: 0.7 W D Low Threshold: 0.8 V (typ) D Fast Switching Speed: 10 ns D S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. BENEFITS D Ease in Driving Switches D Low Offset (Error) Voltage D Low-Voltage Operation D High-Speed Circuits D Low Battery Voltage Operation APPLICATIONS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories D Battery Operated Systems D Power Supply Converter Ci.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | LSI1012LT1G |
LRC |
N-Channel 1.8-V (G-S) MOSFET | |
2 | LSI1012XT1G |
LRC |
N-Channel 1.8-V (G-S) MOSFET | |
3 | LSI1013LT1G |
LRC |
P-Channel 1.8-V (G-S) MOSFET | |
4 | LSI1013XT1G |
LRC |
P-Channel 1.8-V (G-S) MOSFET | |
5 | LSI1032E |
Lattice Semiconductor |
ISPLSI1032E | |
6 | LSI11240 |
LIGITEK electronics |
TOWER TYPE LED LAMPS | |
7 | LSI320HN01-0 |
Samsung |
TFT LCD | |
8 | LSI53C810A |
LSI Logic Corporation |
Pci to Scsi I/o Processor | |
9 | LSI53C825A |
LSI Logic Corporation |
Pci to Ultra Scsi I/o Processor Technical Manual | |
10 | LSI53C875 |
LSI Logic |
PCI to Ultra SCSI I/O Processor | |
11 | LSI53C875A |
LSI Logic |
PCI to Ultra SCSI Controller | |
12 | LSI53C875E |
LSI Logic |
PCI to Ultra SCSI I/O Processor |