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LonFETTM Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency. Product Summary VDS @ Tj,max RDS(on),max 750V 0.96Ω IDM 12A Qg,typ 11nC Features Ultra low RDS(on) Ultra .
Ultra low RDS(on) Ultra low gate charge (typ. Qg = 11nC) 100% UIS tested RoHS compliant TO-251 TO-252 TO-220 TO-220MF D Applications Power faction correction (PFC). Switched mode power supplies (SMPS). Uninterruptible power supply (UPS). G S N-Channel MOSFET Pb Absolute Maximum Ratings Parameter Drain-Source Voltage Continuous drain current Pulsed drain current 1) ( TC = 25°C ) ( TC = 100°C ) Gate-Source voltage Avalanche energy, single pulse 2) Avalanche energy, repetitive 3) Avalanche current, repeti.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | LSG04N65 |
Lonten |
N-channel MOSFET |
|
| 2 | LSG07N70 |
Lonten |
N-channel MOSFET |
|
| 3 | LSG |
Rubycon |
SCREW TERMINAL ALUMINUM ELECTROLYTIC CAPACITORS |
|
| 4 | LSG3331 |
Siemens Semiconductor |
3 mm (T1) MULTILED / Non Diffused |
|
| 5 | LSG3331-JO |
Siemens Semiconductor |
3 mm (T1) MULTILED / Non Diffused |
|
| 6 | LSG3351 |
Siemens Semiconductor |
3 mm (T1) MULTILED / Diffused |
|
| 7 | LSG3351-HO |
Siemens Semiconductor |
3 mm (T1) MULTILED / Diffused |
|
| 8 | LSGA671 |
Siemens Semiconductor |
Multi SIDELED Bright Green Die |
|
| 9 | LSGA671-HK |
Siemens Semiconductor |
Multi SIDELED Bright Green Die |
|
| 10 | LSGA671-J |
Siemens Semiconductor |
Multi SIDELED Bright Green Die |
|
| 11 | LSGA671-JL |
Siemens Semiconductor |
Multi SIDELED Bright Green Die |
|
| 12 | LSGA671-K |
Siemens Semiconductor |
Multi SIDELED Bright Green Die |
|