LSG04N65 - Lonten

LSG04N65 N-channel MOSFET

LonFETTM Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency. Product Summary VDS @ Tj,max 700V RDS(on),max 0.96Ω IDM 12A Qg,typ 13nC Features  Ultra low RDS(on)  Ult.

Features

 Ultra low RDS(on)  Ultra low gate charge (typ. Qg = 13nC)  100% UIS tested  RoHS compliant TO-251 TO-252 TO-220 D TO-220F Applications  Power faction correction (PFC).  Switched mode power supplies (SMPS).  Uninterruptible power supply (UPS). G S N-Channel MOSFET Pb Absolute Maximum Ratings Parameter Drain-Source Voltage Continuous drain current Pulsed drain current 1) ( TC = 25°C ) ( TC = 100°C ) Gate-Source voltage Avalanche energy, single pulse 2) Avalanche energy, repetitive 3) Avalanche current, repetitive 3) Power Dissipation ( TC = 25°C ) - Derate above 25°C O.