LS3N190 - Micross

LS3N190 Amplifier

LS3N190 P-CHANNEL MOSFET The LS3N190 is a monolithic dual enhancement mode P-Channel Mosfet FEATURES  DIRECT REPLACEMENT FOR INTERSIL LS3N190  LOW GATE LEAKAGE CURRENT  IGSS ≤ ± 10pA  LOW TRANSFER CAPACITANCE  Crss ≤ 1.0pF  The hermetically sealed TO-78 package is well suited ABSOLUTE MAXIMUM RATINGS1@ 25°C (unless otherwise noted)  for high reliability and.

Features

DIRECT REPLACEMENT FOR INTERSIL LS3N190  LOW GATE LEAKAGE CURRENT  IGSS ≤ ± 10pA  LOW TRANSFER CAPACITANCE  Crss ≤ 1.0pF  The hermetically sealed TO-78 package is well suited ABSOLUTE MAXIMUM RATINGS1@ 25°C (unless otherwise noted)  for high reliability and harsh environment applications. Maximum Temperatures  Storage Temperature  ‐65°C to +150°C  (See Packaging Information). Operating Junction Temperature  ‐55°C to +135°C  Maximum Power Dissipation  Continuous Power Dissipation (one side)  300mW  LS3N190 Features: Continuous Power Dissipation (one side) 525mW  MAXIMUM CURRENT ƒ Very high Inp.