LS3N165 - Micross

LS3N165 Amplifier

LS3N165 P-CHANNEL MOSFET The LS3N165 is a monolithic dual enhancement mode P-Channel Mosfet FEATURES  DIRECT REPLACEMENT FOR INTERSIL LS3N165  ABSOLUTE MAXIMUM RATINGS1@ 25°C (unless otherwise noted)  Maximum Temperatures  The hermetically sealed TO-78 package is well suited Storage Temperature  ‐65°C to +200°C  for high reliability and harsh environment ap.

Features

DIRECT REPLACEMENT FOR INTERSIL LS3N165  ABSOLUTE MAXIMUM RATINGS1@ 25°C (unless otherwise noted)  Maximum Temperatures  The hermetically sealed TO-78 package is well suited Storage Temperature  ‐65°C to +200°C  for high reliability and harsh environment applications. Operating Junction Temperature  ‐55°C to +150°C  Lead Temperature (Soldering, 10 sec.)  +300°C  (See Packaging Information). Maximum Power Dissipation  Continuous Power Dissipation (one side)  300mW  LS3N165 Features: Total Derating above 25°C 4.2 mW/°C  MAXIMUM CURRENT ƒ Very high Input Impedance Drain Current  50mA  ƒ Low Capa.