AND APPLICATIONS The LP7612 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µ m by 200 µ m Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure a.
♦ 21 dBm Output Power at 1-dB Compression at 18 GHz ♦ 9.5 dB Power Gain at 18 GHz ♦ 1.0 dB Noise Figure at 18 GHz ♦ 55% Power-Added Efficiency
DRAIN BOND PAD (2X) GATE BOND PAD (2X)
LP7612
SOURCE BOND PAD (2x) DIE SIZE: 18.0X13.0 mils (460x330 µm) DIE THICKNESS: 3.9 mils (100 µm) BONDING PADS: 1.9X1.9 mils (50x50 µm)
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DESCRIPTION AND APPLICATIONS
The LP7612 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µ m by 200 µ m Schottky barrier gate. The recessed “mushroo.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | LP7612P70 |
Filtronic Compound Semiconductors |
PACKAGED HIGH DYNAMIC RANGE PHEMT | |
2 | LP7618B |
LAND-HOP MICRO-ELECTRONICS |
6 sound alarm 6 key independent or combined cycle-IC | |
3 | LP7618B |
Silvan Chip |
6 sound alarm 6 key independent or combined cycle-IC | |
4 | LP701 |
Polyfet RF Devices |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR | |
5 | LP702 |
Polyfet RF Devices |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR | |
6 | LP7100B |
Silvan Chip |
Tone siren | |
7 | LP721 |
Polyfet RF Devices |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR | |
8 | LP722 |
Polyfet RF Devices |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR | |
9 | LP750 |
Filtronic Compound Semiconductors |
0.5 W POWER PHEMT | |
10 | LP750P100 |
Filtronic Compound Semiconductors |
PACKAGED 0.5 WATT POWER PHEMT | |
11 | LP750SOT89 |
Filtronic Compound Semiconductors |
LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT | |
12 | LP7510 |
ETC |
PC Power Supply Supervisors |