Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM S.
low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 70.0 Watts Single Ended Package Style AP HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 150 Watts Junction to Case Thermal Resistance o 1.00 C/W Maximum Junction Temperature o 200 C Storage Temperature o o -65 C to 150 C DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 20 V 9.0 A RF CHARACTERISTICS ( SYMBOL .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | LP701 |
Polyfet RF Devices |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR | |
2 | LP7100B |
Silvan Chip |
Tone siren | |
3 | LP721 |
Polyfet RF Devices |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR | |
4 | LP722 |
Polyfet RF Devices |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR | |
5 | LP750 |
Filtronic Compound Semiconductors |
0.5 W POWER PHEMT | |
6 | LP750P100 |
Filtronic Compound Semiconductors |
PACKAGED 0.5 WATT POWER PHEMT | |
7 | LP750SOT89 |
Filtronic Compound Semiconductors |
LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT | |
8 | LP7510 |
ETC |
PC Power Supply Supervisors | |
9 | LP75103122F |
EEMB |
Lithium Iron Phosphate Battery | |
10 | LP7512 |
Filtronic Compound Semiconductors |
ULTRA LOW NOISE PHEMT | |
11 | LP7512P70 |
Filtronic Compound Semiconductors |
PACKAGED ULTRA LOW NOISE PHEMT | |
12 | LP7568130F |
EEMB |
Lithium Iron Phosphate Battery |