LMBT3904WT1 - Leshan Radio Company

LMBT3904WT1 Transistor

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN and PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications. www.DataSheet4U.com ƽ Pb-Free Package is available. NPN LMBT3904WT1 PNP LMBT3906WT1 GENERAL PURPOSE AMPLIFIER T.

Features

c Vdc Vdc mAdc 1 BASE 2 EMITTER 3 COLLECTOR IC LMBT3904WT1 3 COLLECT OR THERMAL CHARACTERISTICS Characteristic Total Device Dissipation (1) T A =25 °C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD R θJA T J , T stg Max 150 833
  –55 to +150 Unit mW °C/W °C 1 B ASE 2 EMIT T ER LMBT3906WT1 LMBT3904/6WT1-1/11 LESHAN RADIO COMPANY, LTD. NPN LMBT3904WT1 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit PNP LMBT3906WT1 OFF CHARACTERISTICS Collector
  –Emitter Breakdown Voltage (2) (I C = 1.0 mAdc, I B = 0) (I C .