LMBT3904TT1G - Leshan Radio Company

LMBT3904TT1G General Purpose Transistor

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURE ƽSimplifies Circuit Design. ƽ We declare that the material of product compliance with RoHS requirements. ƽ S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ORDERING INFORMATION LMBT3904TT1G S-.

Features

ion and Storage Temperature Symbol PD RθJA PD RθJA TJ , Tstg Max 200 1.6 600 300 2.4 400
  –55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C SC-89 1 BASE 3 COLLECTOR 2 EMITTER DEVICE MARKING LMBT3904TT1G = AM ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min OFF CHARACTERISTICS Collector
  –Emitter Breakdown Voltage(3) V (BR)CEO (I C = 1.0 mAdc) Collector
  –Base Breakdown Voltage (I C = 10 µAdc) V (BR)CBO Emitter
  –Base Breakdown Voltage V (BR)EBO (I E = 10 µAdc) Base Cutoff Current I BL ( V CE= 30 Vdc, V EB = 3.0 Vdc, ) Collector Cutoff Cur.