LMBT2222AWT1G - Leshan Radio Company

LMBT2222AWT1G General Purpose Transistor

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 package which is designed for low power surface mount applications. We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other A.

Features

DEVICE MARKING LMBT2222AWT1G S-LMBT2222AWT1G = P1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min OFF CHARACTERISTICS Collector
  –Emitter Breakdown Voltage (1) (I C = 10 mAdc, I B = 0) Collector
  –Base Breakdown Voltage (I C = 10 µAdc, I E = 0) Emitter
  –Base Breakdown Voltage (I E = 10 µAdc, I C = 0) Base Cutoff Current (V CE = 60 Vdc, V EB = 3.0 Vdc) Collector Cutoff Current (V = 60 Vdc, V = 3.0 Vdc) CE EB V (BR)CEO V (BR)CBO V (BR)EBO I BL I CEX 40 75 6.0 — — 1. Pulse Test: Pulse Width<300 µs, Duty Cycle<2.0%. Max Unit — Vdc — Vdc — Vdc 20 nAdc .