LMBT2369ALT1G Switching Transistors Datasheet

LMBT2369ALT1G Switching Transistors

LESHAN RADIO COMPANY, LTD. Switching Transistors z We declare that the material of product compliance with RoHS requirements. z S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ORDERING INFORMATION Device LMBT2369LT1G LMBT2369ALT1G LMBT2369LT3G LMBT2369ALT3G S-LMBT.

Features

25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Value 15 40 40 4.5 200 Unit Vdc Vdc Vdc Vdc mAdc Symbol PD RθJA PD RθJA TJ , Tstg Max Unit 225 mW 1.8 mW/°C 556 °C/W 300 mW 2.4 417
  –55 to +150 mW/°C °C/W °C 3 1 2 SOT-23/TO-236AB 3 COLLECTOR 1 BASE 2 EMITTER DEVICE MARKING LMBT2369LT1G= M1J, LMBT2369A LT1G = 1JA ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min OFF CHARACTERISTICS Collector
  –Emitter Breakdown Voltage(3) (I C = 10 mAdc, I B = 0) V (BR)CEO Collector
  –Emitter Breakdown Voltage (I C = 10 µAdc, .

The same part from a different manufacturer

LMBT2369ALT1G - Leshan Radio Company

LESHAN RADIO COMPANY, LTD. Switching Transistors z We declare that the material of product compliance with RoHS requirem.

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