LM1MA141WKT1G - Leshan Radio Company

LM1MA141WKT1G Common Cathode Silicon Dual Switching Diode

LESHAN RADIO COMPANY, LTD. Common Cathode Silicon Dual Switching Diode This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC-70 package which is designed for low power surface mount applications. z• Fast t, rr < 3.0 ns z• Low C, D < 2.0 pF z We de.

Features

al Value 40 80 40 80 100 150 225 340 500 750 Unit Vdc Vdc mAdc mAdc mAdc 3 1 2 SC
  – 70 CATHODE 3 1 ANODE 2 THERMAL CHARACTERISTICS Rating Power Dissipation Junction Temperature Storage Temperature Symbol PD TJ Tstg Max 150 150
  –55 ~ +150 Unit mW °C °C Marking Symbol Type No.141WK142WK Symbol MT MU MTX The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured. ELECTRICAL CHARACTERISTICS (T = 25°C) A Characteristic Symbol Reverse Voltage Leakage Current LM1MA141WKT1G IR LM1MA142WKT1G Forward Voltage Reverse B.