LM1MA141KT3G - Leshan Radio Company

LM1MA141KT3G Single Silicon Switching Diode

LESHAN RADIO COMPANY, LTD. Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications. LM1MA141KT1G S-LM1MA141KT1G LM1MA142KT1G z• Fast trr, < 3.0 ns z• Low Crr , < 2.0 pF z We decla.

Features

A = 25°C) Rating Symbol Reverse Voltage LM1MA141KT1G LM1MA142KT1G VR Peak Reverse Voltage LM1MA141KT1G LM1MA142KT1G VRM Forward Current IF Peak Forward Current Peak Forward Surge Current IFM I (1) FSM Value 40 80 40 80 100 225 500 THERMAL CHARACTERISTICS Rating Symbol Max Power Dissipation Junction Temperature Storage Temperature PD 150 TJ 150 Tstg
  –55 ~ +150 ELECTRICAL CHARACTERISTICS (TA= 25°C) Characteristic Symbol Reverse Voltage Leakage Current LM1MA141KT1G LM1MA142KT1G IR Forward Voltage Reverse Breakdown Voltage LM1MA141KT1G L M1MA142KT1G VF VR Diode Capacitan.