LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTDG12GPLT1G zApplications Driver zFeatures 1) High hFE. 300 (Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA) 3) Built-in zener diode gives strong protection against reverse surge by.
1) High hFE.
300 (Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage,
(VCE(sat)=0.4V at IC / IB=500mA / 5mA) 3) Built-in zener diode gives strong protection against
reverse surge by L- load (an inductive load).
• We declare that the material of product compliance with
RoHS requirements.
zStructure NPN epitaxial planar silicon transistor (with built-in resistor and zener diode)
zAbsolute maximum ratings (Ta=25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature Storage temperature
Symbol VCBO.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | LDTDG12GPLT3G |
Leshan Radio Company |
Bias Resistor Transistor | |
2 | LDTDG12GPT1G |
LRC |
Bias Resistor Transistor | |
3 | LDTDG12GPT3G |
LRC |
Bias Resistor Transistor | |
4 | LDTDG12GPWT1G |
LRC |
Bias Resistor Transistor | |
5 | LDTDG12GPWT3G |
LRC |
Bias Resistor Transistor | |
6 | LDTD113EET1G |
LRC |
Bias Resistor Transistor | |
7 | LDTD113ELT1G |
Leshan Radio Company |
Bias Resistor Transistor | |
8 | LDTD113ELT3G |
Leshan Radio Company |
Bias Resistor Transistor | |
9 | LDTD113ZET1G |
LRC |
Bias Resistor Transistor | |
10 | LDTD113ZLT1G |
Leshan Radio Company |
Bias Resistor Transistor | |
11 | LDTD113ZLT3G |
Leshan Radio Company |
Bias Resistor Transistor | |
12 | LDTD113ZWT1G |
LRC |
Bias Resistor Transistor |