LDTDG12GPLT1G |
Part Number | LDTDG12GPLT1G |
Manufacturer | Leshan Radio Company |
Description | LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTDG12GPLT1G zApplications Driver zFeatures 1) High hFE. 300 (Min.)... |
Features |
1) High hFE.
300 (Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage,
(VCE(sat)=0.4V at IC / IB=500mA / 5mA) 3) Built-in zener diode gives strong protection against
reverse surge by L- load (an inductive load).
• We declare that the material of product compliance with RoHS requirements. zStructure NPN epitaxial planar silicon transistor (with built-in resistor and zener diode) zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO... |
Document |
LDTDG12GPLT1G Data Sheet
PDF 319.84KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | LDTDG12GPLT3G |
Leshan Radio Company |
Bias Resistor Transistor | |
2 | LDTDG12GPT1G |
LRC |
Bias Resistor Transistor | |
3 | LDTDG12GPT3G |
LRC |
Bias Resistor Transistor | |
4 | LDTDG12GPWT1G |
LRC |
Bias Resistor Transistor | |
5 | LDTDG12GPWT3G |
LRC |
Bias Resistor Transistor |