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Ordering number : ENN6304 CMOS IC LC35W256EM, ET-10W 256K (32K words × 8 bits) SRAM Control pins: OE and CE Overview The LC35W256EM-10W and LC35W256ET-10W are asynchronous silicon-gate CMOS SRAMs with a 32768word by 8-bit structure. These are full-CMOS devices with 6 transistors per memory cell, and feature ultralowvoltage operation, a low operating curre.
• Supply voltage range: 2.7 to 3.6 V
• Access time: 100 ns (maximum)
• Standby current: 0.8 µA (Ta ≤ 60°C) 4.0 µA (Ta ≤ 70°C)
• Operating temperature:
–10 to +70°C
• Data retention voltage: 2.0 to 3.6 V
• All I/O levels: CMOS compatible (0.8 VCC, 0.2 VCC)
• Input/output shared function pins, 3-state output pins
• No clock required (fully static circuits)
• Package 28-pin SOP (450 mil) plastic package: LC35W256EM-10W 28-pin TSOP (8 × 13.4 mm) plastic package: LC35W256ET-10W
0.4 1.27
0.1 2.3
SANYO: SOP28D
unit: mm 3221-TSOP28 (Type I)
[LC35W256ET-10W]
21 8
11.8
1.27max
22
28 1 0.55 8.1
7.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | LC35W256EM |
Sanyo |
256K (32K words x 8 bits) SRAM Control pins: OE and CE |
|
| 2 | LC35W256EM-10W |
Sanyo |
256K (32K words x 8 bits) SRAM Control pins: OE and CE |
|
| 3 | LC35W1000BM |
Sanyo |
Asynchronous Silicon Gate 1M (131 /072 words x 8 bits) SRAM |
|
| 4 | LC35W1000BTS-10U |
Sanyo |
Asynchronous Silicon Gate 1M (131 /072 words x 8 bits) SRAM |
|
| 5 | LC35W1000BTS-70U |
Sanyo |
Asynchronous Silicon Gate 1M (131 /072 words x 8 bits) SRAM |
|
| 6 | LC3514 |
Sanyo |
1024 x 4-Bit High Speed CMOS Static RAM |
|
| 7 | LC3514A |
Sanyo |
1024 x 4-Bit High Speed CMOS Static RAM |
|
| 8 | LC3516 |
Sanyo Electric |
2048 words x 8-Bits CMOS SRAM |
|
| 9 | LC3516A |
Sanyo Electric |
CMOS SRAM |
|
| 10 | LC3516A |
Sanyo Semiconductor Corporation |
2048 x 8 CMOS RAM |
|
| 11 | LC3516D |
Sanyo Electric |
2048 words x 8-Bits SRAM |
|
| 12 | LC3517A |
Sanyo |
2048-word x 8bit COMS Syatic RAM |
|