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LC35W256ET-10W |
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| Part Number | LC35W256ET-10W |
| Manufacturer | Sanyo |
| Description | Ordering number : ENN6304 CMOS IC LC35W256EM, ET-10W 256K (32K words × 8 bits) SRAM Control pins: OE and CE Overview The LC35W256EM-10W and LC35W256ET-10W are asynchronous silicon-gate CMOS SRAMs w... |
| Features |
• Supply voltage range: 2.7 to 3.6 V • Access time: 100 ns (maximum) • Standby current: 0.8 µA (Ta ≤ 60°C) 4.0 µA (Ta ≤ 70°C) • Operating temperature: –10 to +70°C • Data retention voltage: 2.0 to 3.6 V • All I/O levels: CMOS compatible (0.8 VCC, 0.2 VCC) • Input/output shared function pins, 3-state output pins • No clock required (fully static circuits) • Package 28-pin SOP (450 mil) plastic package: LC35W256EM-10W 28-pin TSOP (8 × 13.4 mm) plastic package: LC35W256ET-10W 0.4 1.27 0.1 2.3 SANYO: SOP28D unit: mm 3221-TSOP28 (Type I) [LC35W256ET-10W] 21 8 11.8 1.27max 22 28 1 0.55 8.1 7... |
| Document |
 LC35W256ET-10W Data Sheet
PDF 46.87KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | LC35W256EM |
Sanyo |
256K (32K words x 8 bits) SRAM Control pins: OE and CE |
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| 2 | LC35W256EM-10W |
Sanyo |
256K (32K words x 8 bits) SRAM Control pins: OE and CE |
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| 3 | LC35W1000BM |
Sanyo |
Asynchronous Silicon Gate 1M (131 /072 words x 8 bits) SRAM |
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| 4 | LC35W1000BTS-10U |
Sanyo |
Asynchronous Silicon Gate 1M (131 /072 words x 8 bits) SRAM |
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| 5 | LC35W1000BTS-70U |
Sanyo |
Asynchronous Silicon Gate 1M (131 /072 words x 8 bits) SRAM |
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