LC35256DM - Sanyo

LC35256DM Dual Control Pins: OE and CE 256K (32768-word X 8-bit) SRAM

Ordering number : EN5823 CMOS IC LC35256D-10, LC35256DM, DT-70/10 Dual Control Pins: OE and CE 256K (32768-word × 8-bit) SRAM Overview The LC35256D, LC35256DM, and LC35256DT are 32768-word × 8-bit asynchronous silicon gate CMOS static RAMs. These devices use a 6-transistor full CMOS memory cell, and feature low-voltage operation, low current drain, and an.

Features

• Supply voltage range: 2.7 to 5.5 V — 5-V operation: 5.0 V±10% — 3-V operation: 2.7 to 3.6 V
• Access times — 5-V operation LC35256DM, DT-70: 70 ns (max) LC35256D, DM, DT-10: 100 ns (max) — 3-V operation LC35256DM, DT-70: 200 ns (max) LC35256D, DM, DT-10: 500 ns (max)
• Standby current — 5-V operation: 1.0 µA (Ta ≤ 60°C), 5.0 µA (Ta ≤ 85°C) — 3-V operation: 0.8 µA (Ta ≤ 60°C), 4.0 µA (Ta ≤ 85°C)
• Operating temperature range:
  –40 to +85°C
• Data retention supply voltage: 2.0 to 5.5 V
• All I/O levels — 5-V operation: TTL compatible — 3-V operation: VCC
  – 0.2 V/0.2 V
• Shared I/O pins and 3-st.