Ordering number : EN5823 CMOS IC LC35256D-10, LC35256DM, DT-70/10 Dual Control Pins: OE and CE 256K (32768-word × 8-bit) SRAM Overview The LC35256D, LC35256DM, and LC35256DT are 32768-word × 8-bit asynchronous silicon gate CMOS static RAMs. These devices use a 6-transistor full CMOS memory cell, and feature low-voltage operation, low current drain, and an.
• Supply voltage range: 2.7 to 5.5 V — 5-V operation: 5.0 V±10% — 3-V operation: 2.7 to 3.6 V
• Access times — 5-V operation LC35256DM, DT-70: 70 ns (max) LC35256D, DM, DT-10: 100 ns (max) — 3-V operation LC35256DM, DT-70: 200 ns (max) LC35256D, DM, DT-10: 500 ns (max)
• Standby current — 5-V operation: 1.0 µA (Ta ≤ 60°C), 5.0 µA (Ta ≤ 85°C) — 3-V operation: 0.8 µA (Ta ≤ 60°C), 4.0 µA (Ta ≤ 85°C)
• Operating temperature range:
–40 to +85°C
• Data retention supply voltage: 2.0 to 5.5 V
• All I/O levels — 5-V operation: TTL compatible — 3-V operation: VCC
– 0.2 V/0.2 V
• Shared I/O pins and 3-st.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | LC35256DM |
Sanyo |
Dual Control Pins: OE and CE 256K (32768-word X 8-bit) SRAM | |
2 | LC35256DT-10 |
Sanyo |
Dual Control Pins: OE and CE 256K (32768-word X 8-bit) SRAM | |
3 | LC35256DT-70 |
Sanyo |
Dual Control Pins: OE and CE 256K (32768-word X 8-bit) SRAM | |
4 | LC35256A |
Sanyo |
256 K (32768 words X 8 bits) SRAM | |
5 | LC35256AM |
Sanyo |
256 K (32768 words X 8 bits) SRAM | |
6 | LC35256AM |
Sanyo |
256 K (32768 words X 8 bits) SRAM | |
7 | LC35256AS |
Sanyo |
256 K (32768 words X 8 bits) SRAM | |
8 | LC35256AT-10 |
Sanyo |
256 K (32768 words X 8 bits) SRAM | |
9 | LC35256AT-10LV |
Sanyo |
256 K (32768 words X 8 bits) SRAM | |
10 | LC35256AT-12LV |
Sanyo |
256 K (32768 words X 8 bits) SRAM | |
11 | LC35256AT-15LV |
Sanyo |
256 K (32768 words X 8 bits) SRAM | |
12 | LC35256AT-70 |
Sanyo |
256 K (32768 words X 8 bits) SRAM |