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LBC848AWT1G - Leshan Radio Company

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LBC848AWT1G General Purpose Transistors

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ORDERING INFORMATION ( Pb– Free ) Device LBC846AWT1G S-LBC846AWT1G LBC846A.

Features

T J , T stg Max Unit 150 mW 833
  –55 to +150 °C/W °C 1 BASE 3 COLLECTOR 2 EMITTER DEVICE MARKING LBC846AWT1G = 1A; LBC846BWT1G = 1B; LBC847AWT1G = 1E; LBC847BWT1G = 1F; LBC847CWT1G = 1G; LBC848AWT1G = 1J; LBC848BWT1G = 1K; LBC848CWT1G = 1L; ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min OFF CHARACTERISTICS Collector
  –Emitter Breakdown Voltage (IC = 10 mA) LBC846 Series LBC847 Series LBC848 Series Collector
  –Emitter Breakdown Voltage (IC = 10 µA, VEB = 0) LBC846 Series LBC847 Series LBC848 Series Collector
  –Base Breakdown Voltage (IC = 10 µA).

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