LBC848AWT1G |
Part Number | LBC848AWT1G |
Manufacturer | Leshan Radio Company |
Description | LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requirin... |
Features |
T J , T stg
Max Unit 150 mW
833 –55 to +150 °C/W °C 1 BASE 3 COLLECTOR 2 EMITTER DEVICE MARKING LBC846AWT1G = 1A; LBC846BWT1G = 1B; LBC847AWT1G = 1E; LBC847BWT1G = 1F; LBC847CWT1G = 1G; LBC848AWT1G = 1J; LBC848BWT1G = 1K; LBC848CWT1G = 1L; ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min OFF CHARACTERISTICS Collector –Emitter Breakdown Voltage (IC = 10 mA) LBC846 Series LBC847 Series LBC848 Series Collector –Emitter Breakdown Voltage (IC = 10 µA, VEB = 0) LBC846 Series LBC847 Series LBC848 Series Collector –Base Breakdown Voltage (IC = 10 µA)... |
Document |
LBC848AWT1G Data Sheet
PDF 394.62KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | LBC848AWT1 |
Leshan Radio Company |
(LBC846xWT1 - LBC848xWT1) General Purpose Transistors NPN Silicon | |
2 | LBC848AWT3G |
Leshan Radio Company |
General Purpose Transistors | |
3 | LBC848ALT1G |
Leshan Radio Company |
General Purpose Transistors | |
4 | LBC848ALT3G |
Leshan Radio Company |
General Purpose Transistors | |
5 | LBC848BDW1T1 |
Leshan Radio Company |
(LBC846xDW1T1 - LBC848xDW1T1) Dual General Purpose Transistors NPN Duals |